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| 2SF292200CYY 2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS DESCRIPTION O O O O O O O O 2SF292200CYY is a ultrafast recovery diode chips fabricated in silicon epitaxial planar technology; Ultrafast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920m X 2920m; Chip Thickness: 28020m; Chip Topography and Dimensions La: Chip Size:2920 m; Lb: Pad Size: 2840 m; O ORDERING SPECIFICATIONS Product Name 2SF292200CYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward RectifiedCurrent@Tc=150C Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 200 15 200 175 -55~175 Unit V A A C C ELECTRICAL CHARACTERISTICS (Tamb=25 Parameters Reverse Voltage Forward Voltage Reverse Current Reverse recovery time Symbol VBR VF IR Trr ) Test Conditions Min. 200 ---Max. -1.05 10 35 Unit V V A IR=50 A IF=15A VR=200V IF=1A,di/dt=50A/ s ns HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.06.06 Page 1 of 1 |
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